Giant magnetoresistance (GMR) is a quantum mechanical effect observed in thin film structures composed of alternating ferromagnetic and non-magnetic layers. It is characterized by a significant change ...

Giant magnetoresistance (GMR) describes a pronounced change in electrical resistance induced by an external magnetic field in structures composed of alternating ferromagnetic and non-magnetic layers.

(a) A sketch of the spin-valve effect in bulk kagome helimagnet. (b) MFM images of TmMn6Sn6 under magnetic field. (c) The asymmetric magnetoresistance for electric current along the helical axis of ...

Recently, a group of researchers discovered a novel way to achieve spin-valve effects using kagome quantum magnets. "This approach uses a prototype device made from the kagome magnet TmMn₆Sn₆," ...

In a recent study published in the journal Microsystems & Nanoengineering, researchers describe a groundbreaking novel fabrication process for a touchless interactive device ('skin') using a flexible ...

Quantum mechanics states that electrons have two stable spins—up and down. With the advent of nanoscale fabrication methods, device companies are harnessing this knowledge to create devices. The ...

Magnetoresistive sensing exploits the dependence of electrical resistance on magnetic configuration within nanostructured materials to detect and quantify magnetic fields with high sensitivity and ...